Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6810 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V

文件：115.11 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID =3.5 A (VGS = 10V) ● RDS(ON)

文件：1.87148 Mbytes 页数：4 Pages

KEXIN

科信电子

30V Dual N-Channel MOSFET

文件：523.47 Kbytes 页数：5 Pages

AOSMD

万国半导体

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID =3.5 A (VGS = 10V) ● RDS(ON)

文件：2.56098 Mbytes 页数：4 Pages

KEXIN

科信电子

30V Dual N-Channel MOSFET

文件：523.47 Kbytes 页数：5 Pages

AOSMD

万国半导体