30V P-Channel MOSFET

General Description The AO4415 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS (V) = -30V ID = -8 A (VGS = -20V) RDS(ON)

文件：172.68 Kbytes 页数：4 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

[AOSMD] General Description The AO4415 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -8 A RDS(ON)

文件：273.11 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-8 A (VGS =-20V) ● RDS(ON)

文件：1.34155 Mbytes 页数：4 Pages

KEXIN

科信电子

30V P-Channel MOSFET

General Description The AO4415 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS (V) = -30V ID = -8 A (VGS = -20V) RDS(ON)

文件：1.69843 Mbytes 页数：4 Pages

WHXPCB

万和兴电子

MOSFET：P-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-8 A (VGS =-20V) ● RDS(ON)

文件：1.80721 Mbytes 页数：4 Pages

KEXIN

科信电子