Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4842 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. AO4842 is Pb-free (meets ROHS & Sony 259 specifications). AO48

文件：133.54 Kbytes 页数：4 Pages

AOSMD

万国半导体

丝印：4842；Package：SOP-8；Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 7.7A (VGS = 10V) ● RDS(ON)

文件：1.6292 Mbytes 页数：4 Pages

KEXIN

科信电子

Dual N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFETPower MOSFET • 100 Rg Tested • 100 UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • Low Current DC/DC

文件：1.04814 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual N-Channel MOSFET uses advanced trench technology

Description： This Dual N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=7A,RDS(ON)

文件：1.6807 Mbytes 页数：5 Pages

DOINGTER

杜因特

丝印：4842；Package：SOP-8；Dual N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES @ Ros(oN =35 mO@VGS=10V ® Ros =45 mO@VGS=4.5V ‘@ Super high density cell design for extremely low Ros(oN) ® Exceptional on-resistance and maximum DC curent capability

文件：2.18494 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

30V Dual N-Channel MOSFET

文件：382.72 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel MOSFET

XW

芯微半导体

场效应管

HXY MOSFET

华轩阳电子

Dual N-ChannelEnhancement Mode Power MOSFET

Techpublic

台舟电子

丝印：4842；Package：SOP-8；Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 7.7A (VGS = 10V) ● RDS(ON)

文件：2.26944 Mbytes 页数：4 Pages

KEXIN

科信电子