AO4413AL

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4413AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatechargewitha25Vgaterating.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardproductAO4413AisPb-free(meetsROHS&Sony259specification

AO4413-HF

P-ChannelMOSFET

■Features ●VDS(V)=-30V ●ID=-15A(VGS=-20V) ●RDS(ON)

AON4413

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAON4413usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardproductAON4413isPb-free(meetsROHS&Sony259specifications). Features VDS(V)=-30V

AP4413GM

SimpleDriveRequirement,LowOn-resistance

Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSO-8packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedfor

AP4413M

P-CHANNELENHANCEMENTMODE

Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSO-8packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedfor

BA4413

FMFrontEndIC

C4413

2P24SOLIDBCSRPVCUNSHLDPVCSound,Alarm&SecurityCable

CHT4413UPNPT

PNP&NPNMuti-ChipGeneralPurposeTransistor

VOLTAGE40VoltsCURRENT600mAmpere FEATURE *Smallsurfacemountingtype.(SC-88/SOT-363) *Highcurrentgain. *Suitableforhighpackingdensity. *Lowcolloector-emittersaturation. *Highsaturationcurrentcapability. *TwointernalisolatedPNPandNPNtransistorsinonepackage. A

CMLT4413

SURFACEMOUNTCOMPLEMENTARYNPN/PNPSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCMLT4413consistsofoneisolated2N4401NPNsilicontransistorandonecomplementaryisolated2N4403PNPsilicontransistor,manufacturedbytheepitaxialplanarprocessandepoxymoldedinanSOT-563surfacemountpackage.Thisdeviceisdesignedforsmall

DMG4413LSS

SINGLEP-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowInputCapacitance •FastSwitchingSpeed