P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4413A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard product AO4413A is Pb-free (meets ROHS & Sony 259 specification

文件：116.98 Kbytes 页数：4 Pages

AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-15 A (VGS =-20V) ● RDS(ON)

文件：2.67415 Mbytes 页数：5 Pages

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AON4413 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AON4413 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = -30V

文件：141.88 Kbytes 页数：4 Pages

AOSMD

万国半导体

Simple Drive Requirement, Low On-resistance

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for

文件：74.71 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子