P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4447 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4447 is Pb-free (meets ROHS & Sony 259 specifications). AO4447L is a Gr

文件：1.15858 Mbytes 页数：7 Pages

AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-15 A (VGS =-10V) ● RDS(ON)

文件：1.55743 Mbytes 页数：4 Pages

KEXIN

科信电子

30V P-Channel MOSFET

General Description The AO4447 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Product Summary VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON)

文件：1.69907 Mbytes 页数：4 Pages

WHXPCB

万和兴电子

30V P-Channel MOSFET

文件：174.7 Kbytes 页数：4 Pages

AOSMD

万国半导体

丝印：AO4447A；Package：SOP-8；-30V P-Channel MOSFET

Features VDS (V) =-30V ID = -18.5A (VGS = -10V) RDS(ON)

文件：938.6 Kbytes 页数：7 Pages

UMW

友台半导体

MOSFET：P-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

30V P-Channel MOSFET

General Description • The AO4447A uses advanced trench technology to provide excellent RDS(ON) with low gate charge.This device is ideal for load switch and battery protection applications. • RoHS and Halogen-Free Compliant Product Summary VDS -3

文件：2.18589 Mbytes 页数：5 Pages

WHXPCB

万和兴电子

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-17 A (VGS =-10V) ● RDS(ON)

文件：1.71304 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Load Switch • Notebook Adaptor Switch

文件：992.94 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

30V P-Channel MOSFET

General Description The AO4447A uses advanced trench technology to provide excellent RDS(ON) with low gate charge.This device is ideal for load switch and battery protection applications. Product Summary VDS (V) = -30V ID = -17A (VGS = -10V) RDS(ON)

文件：194.7 Kbytes 页数：5 Pages

AOSMD

万国半导体