型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
AO4447A | 丝印:AO4447A;Package:SOP-8;-30V P-Channel MOSFET Features VDS (V) =-30V ID = -18.5A (VGS = -10V) RDS(ON) 文件:938.6 Kbytes 页数:7 Pages | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | |
AO4447A | 丝印:AO4447A;Package:SOP-8;-30V P-Channel MOSFET Features VDS (V) =-30V ID = -18.5A (VGS = -10V) RDS(ON) 文件:938.6 Kbytes 页数:7 Pages | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | |
AO4447A | 30V P-Channel MOSFET General Description The AO4447A uses advanced trench technology to provide excellent RDS(ON) with low gate charge.This device is ideal for load switch and battery protection applications. Product Summary VDS (V) = -30V ID = -17A (VGS = -10V) RDS(ON) 文件:194.7 Kbytes 页数:5 Pages | AOSMD 万国半导体 | AOSMD | |
AO4447A | 30V P-Channel MOSFET General Description • The AO4447A uses advanced trench technology to provide excellent RDS(ON) with low gate charge.This device is ideal for load switch and battery protection applications. • RoHS and Halogen-Free Compliant Product Summary VDS -3 文件:2.18589 Mbytes 页数:5 Pages | WHXPCB 万和兴电子 | WHXPCB | |
AO4447A | P-Channel MOSFET ■ Features ● VDS (V) =-30V ● ID =-17 A (VGS =-10V) ● RDS(ON) 文件:1.71304 Mbytes 页数:4 Pages | KEXIN 科信电子 | KEXIN | |
AO4447A | P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Load Switch • Notebook Adaptor Switch 文件:992.94 Kbytes 页数:9 Pages | VBSEMI 微碧半导体 | VBSEMI | |
AO4447A | 30V P-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • ESD Protected • RoHS and Halogen-Free Compliant Applications • System/Load Switch • Battery Switch • USB-PD Load Switch 文件:383.45 Kbytes 页数:5 Pages | AOSMD 万国半导体 | AOSMD | |
30V P-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • ESD Protected • RoHS and Halogen-Free Compliant Applications • System/Load Switch • Battery Switch • USB-PD Load Switch 文件:383.45 Kbytes 页数:5 Pages | AOSMD 万国半导体 | AOSMD | ||
P-Channel MOSFET ■ Features ● VDS (V) =-30V ● ID =-17 A (VGS =-10V) ● RDS(ON) 文件:1.86494 Mbytes 页数:4 Pages | KEXIN 科信电子 | KEXIN | ||
P-Channel Enhancement Mode Field Effect Transistor General Description The AO4447AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge.This device is ideal for load switch and battery protection applications. -RoHS Compliant -Halogen Free Features VDS (V) = -30V ID = -17A (VGS = -10V) RDS 文件:167.04 Kbytes 页数:5 Pages | AOSMD 万国半导体 | AOSMD |
详细参数
- 型号:
AO4447A
- 功能描述:
MOSFET P-CH 30V 17A 8-SOIC
- RoHS:
是
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
-
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
AOS美国万代 |
24+ |
SOP-8 |
888000 |
AOS代理商 优势供应美国万代AOS全系列 |
询价 | ||
AOS |
17+ |
SOP8 |
5498 |
全新原装 |
询价 | ||
AO |
25+ |
SOP-8 |
32000 |
AO全新特价AO4447A即刻询购立享优惠#长期有货 |
询价 | ||
AOS |
23+ |
SOP8 |
18961 |
销售一系列芯片进口原装 |
询价 | ||
AOS |
17+ |
SOP8 |
9242 |
询价 | |||
AOS/万代 |
24+ |
SOP |
30000 |
只做原厂渠道 可追溯货源 |
询价 | ||
AOS/万代 |
20+ |
SOP-8 |
120000 |
原装正品 可含税交易 |
询价 | ||
AOS/万代 |
2021+ |
SOP8 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
AOS |
24+ |
SOP |
15000 |
只做原装 有挂有货 假一赔十 |
询价 | ||
AOS |
24+ |
SOP |
22048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 |
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