P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-17 A (VGS =-10V) ● RDS(ON)

文件：1.86494 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4447AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge.This device is ideal for load switch and battery protection applications. -RoHS Compliant -Halogen Free Features VDS (V) = -30V ID = -17A (VGS = -10V) RDS

文件：167.04 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-15 A (VGS =-10V) ● RDS(ON)

文件：1.86846 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4447 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4447 is Pb-free (meets ROHS & Sony 259 specifications). AO4447L is a Gr

文件：1.15858 Mbytes 页数：7 Pages

AOSMD

万国半导体