| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AO4466 | 丝印：AO4466；Package：SOP-8；N-Channel MOSFET Product Summary VDS (V) = 30V ID =10A RDS(ON) 文件：429.63 Kbytes 页数：8 Pages | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | |
AO4466 | 丝印：AO4466；Package：SOP-8；N-Channel MOSFET General Description The AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the 文件：421.21 Kbytes 页数：8 Pages | EVVOSEMI 翊欧 | EVVOSEMI | |
AO4466 | 丝印：AO4466；Package：SOP-8；N-Channel MOSFET Product Summary VDS (V) = 30V ID =10A RDS(ON) 文件：429.63 Kbytes 页数：8 Pages | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | |
AO4466 | 丝印：AO4466；Package：SOP-8；N-Channel MOSFET General Description The AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the 文件：421.21 Kbytes 页数：8 Pages | EVVOSEMI 翊欧 | EVVOSEMI | |
AO4466 | 丝印：4466；Package：SOP-8；N-Channel MOSFET ■ Features ● VDS (V) = 30V ● ID = 9.4 A (VGS = 10V) ● RDS(ON) 文件：1.42012 Mbytes 页数：4 Pages | KEXIN 科信电子 | KEXIN | |
丝印：4466；Package：SOP-8；N-Channel MOSFET ■ Features ● VDS (V) = 30V ● ID = 9.4 A (VGS = 10V) ● RDS(ON) 文件：1.47095 Mbytes 页数：4 Pages | KEXIN 科信电子 | KEXIN | ||
丝印：4466；Package：SO-8；N-Channel Enhancement Mode Field Effect Transistor General Description The AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sour 文件：127.82 Kbytes 页数：4 Pages | AOSMD 万国半导体 | AOSMD | ||
丝印：4466；Package：SO-8；30V N-Channel MOSFET 文件：411.62 Kbytes 页数：6 Pages | AOSMD 万国半导体 | AOSMD | ||
AO4466 | N-Channel Enhancement Mode Field Effect Transistor General Description The AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sour 文件：127.82 Kbytes 页数：4 Pages | AOSMD 万国半导体 | AOSMD | |
AO4466 | 30V N-Channel MOSFET General Description The AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sour 文件：2.58648 Mbytes 页数：6 Pages | WHXPCB 万和兴电子 | WHXPCB |
详细参数
- 型号：
AO4466
- 功能描述：
MOSFET N-CH 30V 9.4A 8-SOIC
- RoHS：
是
- 类别：
分离式半导体产品 >> FET - 单
- 系列：
-
- 标准包装：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金属氧化物 FET
- 特点：
逻辑电平门
- 漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
- C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
- Vgs：
72nC @ 10V 输入电容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安装类型：
通孔
- 封装/外壳：
TO-220-3 整包
- 供应商设备封装：
TO-220FP
- 包装：
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS美国万代 |
24+ |
SOP-8 |
189008 |
专营AOS美国万代 优势现货 AOS全系列 场效应管 |
询价 | ||
AOS(万代) |
24+ |
标准封装 |
12663 |
我们只是原厂的搬运工 |
询价 | ||
AOS/万代 |
25+ |
SOP-8 |
32078 |
AOS/万代全新特价AO4466即刻询购立享优惠#长期有货 |
询价 | ||
AOS |
16+ |
SO-8 |
4000 |
进口原装现货/价格优势! |
询价 | ||
AOS |
16/17+ |
SOP8 |
7646 |
AOS现货库存长期供应 |
询价 | ||
AOS/万代 |
2019+ |
SOP8 |
3470 |
原厂渠道 可含税出货 |
询价 | ||
AOS万代 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||||
UMW 友台 |
23+ |
SOP-8 |
57000 |
原装正品，实单请联系 |
询价 | ||
AOS/万代 |
12+PBF |
SO-8 |
4000 |
原装正品 可含税交易 |
询价 | ||
AOS/万代 |
2021+ |
SOP-8 |
9000 |
原装现货,随时欢迎询价 |
询价 |
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