丝印：AO4614；Package：SOP-8；40V P-Channel and N-Channel MOSFET

Product Summary N-Channel P-Channel VDS (V) = 40V, -40V ID = 6A (VGS=10V) -5A (VGS=-10V) RDS(ON)

文件：358.17 Kbytes 页数：9 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：AO4614；Package：SOP-8；40V P-Channel and N-Channel MOSFET

General Description The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

文件：316.28 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

丝印：AO4614；Package：SOP-8；40V P-Channel and N-Channel MOSFET

Product Summary N-Channel P-Channel VDS (V) = 40V, -40V ID = 6A (VGS=10V) -5A (VGS=-10V) RDS(ON)

文件：358.17 Kbytes 页数：9 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：AO4614；Package：SOP-8；40V P-Channel and N-Channel MOSFET

General Description The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

文件：316.28 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

丝印：4614A；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 40V ID = 6 A (VGS = 10V) RDS(ON)

文件：2.26095 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4614A；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 40V ID = 6 A (VGS = 10V) RDS(ON)

文件：2.39477 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4614B；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 40V ID = 6 A (VGS = 10V) RDS(ON)

文件：1.62947 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4614B；Package：SOP8；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Application | « Reverse Battery protection ~~ « Load switch | « Power management « Motor Control | « Portable Power Adaptors |

文件：3.90906 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

丝印：4614B；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 40V ID = 6 A (VGS = 10V) RDS(ON)

文件：3.10222 Mbytes 页数：7 Pages

KEXIN

科信电子

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4614 is Pb-free (meets ROHS & Sony 259 specifications). AO4614L is

文件：142.89 Kbytes 页数：7 Pages

AOSMD

万国半导体