Complementary Enhancement Mode Field Effect Transistor

General Description The AO4614A uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4614A is Pb-free (meets ROHS & Sony 259 specifications). Features

文件：152.12 Kbytes 页数：7 Pages

AOSMD

万国半导体

丝印：4614A；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 40V ID = 6 A (VGS = 10V) RDS(ON)

文件：2.26095 Mbytes 页数：7 Pages

KEXIN

科信电子

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

文件：1.78894 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

丝印：4614A；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 40V ID = 6 A (VGS = 10V) RDS(ON)

文件：2.39477 Mbytes 页数：7 Pages

KEXIN

科信电子

MOSFET：Complementary

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

40V N+P MOSFET

JGSEMI

台湾金锆

MOSFET

MTW

美台微