丝印：AO4614；Package：SOP-8；40V P-Channel and N-Channel MOSFET

Product Summary N-Channel P-Channel VDS (V) = 40V, -40V ID = 6A (VGS=10V) -5A (VGS=-10V) RDS(ON)

文件：358.17 Kbytes 页数：9 Pages

UMW

友台半导体

丝印：AO4614；Package：SOP-8；40V P-Channel and N-Channel MOSFET

General Description The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

文件：316.28 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

丝印：AO4614；Package：SOP-8；40V P-Channel and N-Channel MOSFET

Product Summary N-Channel P-Channel VDS (V) = 40V, -40V ID = 6A (VGS=10V) -5A (VGS=-10V) RDS(ON)

文件：358.17 Kbytes 页数：9 Pages

UMW

友台半导体

丝印：AO4614；Package：SOP-8；40V P-Channel and N-Channel MOSFET

General Description The AO4614 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

文件：316.28 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

丝印：4614A；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 40V ID = 6 A (VGS = 10V) RDS(ON)

文件：2.26095 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4614A；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 40V ID = 6 A (VGS = 10V) RDS(ON)

文件：2.39477 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4614B；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 40V ID = 6 A (VGS = 10V) RDS(ON)

文件：1.62947 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4614B；Package：SOP8；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Application | « Reverse Battery protection ~~ « Load switch | « Power management « Motor Control | « Portable Power Adaptors |

文件：3.90906 Mbytes 页数：6 Pages

TECHPUBLIC

台舟电子

丝印：4614B；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 40V ID = 6 A (VGS = 10V) RDS(ON)

文件：3.10222 Mbytes 页数：7 Pages

KEXIN

科信电子

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

文件：1.23149 Mbytes 页数：14 Pages

VBSEMI

微碧半导体