丝印：AOM；Package：3LdSOT-23；Precision Low Power FGA Voltage References

The ISL60002 FGA voltage references are very high precision analog voltage references fabricated using the Renesas proprietary Floating Gate Analog (FGA) technology and feature low supply voltage operation at ultra-low 350nA operating current. Features • Reference voltages . . . . . 1.024V, 1.2V

文件：2.35923 Mbytes 页数：40 Pages

RENESAS

瑞萨

丝印：M033V120X2Q；Package：TO-247-4L；1200 V αSiC Silicon Carbide Power MOSFET

Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS, ON • Fast switching with low RG and low capacitance • Optimized gate drive voltage (VGS = 15 V) • Low reverse recovery diode (Qrr) • AEC-Q101 Automotive Qualified Applications • xEV Charger • Electric Vehicle Supply

文件：778.62 Kbytes 页数：9 Pages

AOSMD

万国半导体

丝印：M06.5V120X2Q；Package：TO-247-4L；1200 V αSiC Silicon Carbide Power MOSFET

Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS, ON • Fast switching with low RG and low capacitance • Optimized gate drive voltage (VGS = 15 V) • Low reverse recovery diode (Qrr) • AEC-Q101 Automotive Qualified Applications • xEV Charger • Electric Vehicle Supply

文件：803.98 Kbytes 页数：9 Pages

AOSMD

万国半导体

750 V αSiC Silicon Carbide Power MOSFET

Features •Proprietary αSiC MOSFET technology •Low loss, with low RDS, ON •Fast switching with low RG and low capacitance •Optimized gate drive voltage (VGS = 15 V) •Low reverse recovery diode (Qrr) •AEC-Q101 Automotive Qualified Applications •xEV Charger •Electric Vehicle Supply Equipme

文件：1.20705 Mbytes 页数：8 Pages

AOSMD

万国半导体

1200 V αSiC Silicon Carbide Power MOSFET

Features •Proprietary αSiCTM MOSFET technology •Low loss, fast switching speeds with low RG •Optimized drive voltage (VGS = 15 V) for broad driver compatibility •Robust body diode and low Qrr Applications Renewable •EV Charger •Solar Inverters Industrial •UPS •SMPS •Motor Drives

文件：885.4 Kbytes 页数：9 Pages

AOSMD

万国半导体

750 V αSiC Silicon Carbide Power MOSFET

Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS, ON • Fast switching with low RG and low capacitance • Optimized gate drive voltage (VGS = 15 V) • Low reverse recovery diode (Qrr) • AEC-Q101 Automotive Qualified Applications • xEV Charger • Electric Vehicle Supply

文件：1.09477 Mbytes 页数：8 Pages

AOSMD

万国半导体

1200 V αSiC Silicon Carbide Power MOSFET

Features • Proprietary αSiC MOSFET technology • Low loss, fast switching speeds with low RG • Optimized drive voltage (VGS = 15 V) for broad driver compatibility • Robust body diode and low Qrr Applications Renewable Industrial • EV Charger • UPS • Solar Inverters

文件：818.32 Kbytes 页数：9 Pages

AOSMD

万国半导体

SPECIFICATIONS FOR 8.0??OPEN FRAME MONITOR

文件：2.55375 Mbytes 页数：18 Pages

AZDISPLAYS

SPECIFICATIONS FOR 12.1??OPEN FRAME MONITOR

文件：2.65839 Mbytes 页数：18 Pages

AZDISPLAYS

SPECIFICATIONS FOR 15.0??OPEN FRAME MONITOR

文件：2.62828 Mbytes 页数：18 Pages

AZDISPLAYS