| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：AOP；Package：SOT-23；Precision Low Power FGA Voltage References 文件：2.45395 Mbytes 页数：40 Pages | RENESAS 瑞萨 | RENESAS | ||
丝印：AOP；Package：SOT-23；Precision Low Power FGA Voltage References 文件：2.45395 Mbytes 页数：40 Pages | RENESAS 瑞萨 | RENESAS | ||
Complementary Enhancement Mode Field Effect Transistor General Description The AOP600 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AOP600 is Pb-free (meets ROHS & Sony 259 specifications). A 文件：150.01 Kbytes 页数：7 Pages | AOSMD 万国半导体 | AOSMD | ||
Complementary Enhancement Mode Field Effect Transistor General Description The AOP600 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AOP600 is Pb-free (meets ROHS & Sony 259 specifications). A 文件：150.01 Kbytes 页数：7 Pages | AOSMD 万国半导体 | AOSMD | ||
Complementary Enhancement Mode Field Effect Transistor General Description The AOP601 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related lo 文件：157.29 Kbytes 页数：8 Pages | AOSMD 万国半导体 | AOSMD | ||
Complementary Enhancement Mode Field Effect Transistor General Description The AOP601 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related lo 文件：157.29 Kbytes 页数：8 Pages | AOSMD 万国半导体 | AOSMD | ||
Complementary Enhancement Mode Field Effect Transistor General Description The AOP604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related los 文件：842.82 Kbytes 页数：11 Pages | OPTEK | OPTEK | ||
Complementary Enhancement Mode Field Effect Transistor General Description The AOP605/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AOP605 and AOP605L are electrically identical. -RoHS Compliant -AOP605L is H 文件：188.26 Kbytes 页数：7 Pages | AOSMD 万国半导体 | AOSMD | ||
Complementary Enhancement Mode Field Effect Transistor General Description The AOP605/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. AOP605 and AOP605L are electrically identical. -RoHS Compliant -AOP605L is H 文件：188.26 Kbytes 页数：7 Pages | AOSMD 万国半导体 | AOSMD | ||
Complementary Enhancement Mode Field Effect Transistor General Description The AOP606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other PWM applications. Standard Product AOP606 is Pb-free (meets ROHS & Sony 259 specifications). AOP606L is a Green 文件：221.47 Kbytes 页数：7 Pages | AOSMD 万国半导体 | AOSMD |
详细参数
- 型号：
AOP
- 功能描述：
基准电压& 基准电流 PREC 3.3V HI OUTPUT FGAVREF 1MV -40 - +1
- RoHS：
否
- 制造商：
STMicroelectronics
- 产品：
Voltage References
- 拓扑结构：
Shunt References
- 参考类型：
Programmable
- 输出电压：
1.24 V to 18 V
- 初始准确度：
0.25 %
- 平均温度系数（典型值）：
100 PPM/C 串联 VREF -
- 输入电压（最大值）：
串联 VREF -
- 分流电流（最大值）：
60 mA
- 最大工作温度：
+ 125 C
- 封装/箱体：
SOT-23-3L
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
25+ |
SOT23 |
15281 |
INTERSIL原装特价ISL60002BAH333Z-T7A即刻询购立享优惠#长期有货 |
询价 | ||
Intersil(英特矽尔) |
18+ |
9800 |
代理进口原装/实单价格可谈 |
询价 | |||
Intersil |
24+ |
SOT-23-3 |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
询价 | ||
Intersil |
24+ |
SOT-23-3 |
65200 |
一级代理/放心采购 |
询价 | ||
Intersil |
1931+ |
N/A |
493 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
RENESAS(瑞萨)/IDT |
2447 |
SOT-23-3 |
105000 |
250个/圆盘一级代理专营品牌!原装正品,优势现货,长 |
询价 | ||
INTERSIL |
25+ |
SOT-23-3 |
932 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
INTERSIL |
23+ |
SOT23 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INTERSIL |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
INTERSIL |
26+ |
SOT23-3 |
8635 |
全新原装正品,优势价格 |
询价 |
相关芯片丝印
更多- ISL60002CIH311Z-TK
- ISL60002CIH312Z-TK
- ISL60002CIH325Z-TK
- ISL60002CIH325Z-TK
- TPA6136A2YFFT
- TPA6136A2YFFR.A
- TPA6136A2YFFT.A
- SIP824ZEU
- ISL60002DIH311Z-TK
- AOZ1282DI
- AOZ1282CI-1
- CMDZ2L4
- SMBJ7.5A
- SMAJ7.5A
- MIC803-44D2VM3
- MMBZ5236B
- SMBJ7.5A
- SMBJ7.5A
- TLV70734PDQNT
- 74AUP1G157GX
- BD48E34G
- BD48K34G-TL
- SMBJ7.5A
- SMBJ7.5CA
- SMBJ7.5A
- SMBJ7.5A
- BD48E34G-TL
- BD48E34G
- SMAJ7.5A
- BD48E34G-TR
- 74AUP2G157GS
- SMBJ7.5A
- BD48K34G-TR
- BD48E34G-TR
- SMBJ7.5CA
- BD48K34G-TR
- BD48E34G-TR
- SSDJ7.5CA
- BD48K34G-TR
- SMAJ7.5A
- SMBJ7.5A
- BD48K34
- TLV70734PDQNT
- SMF5V4A
- BD48K34G-TL
相关库存
更多- ISL60002CIH312Z-TK
- ISL60002CIH325Z-T7A
- ISL60002CIH325Z-T7A
- ISL60002CAH333Z-TK
- TPA6136A2YFFR
- TPA6136A2YFFR.B
- TPA6136A2YFFT.B
- ISL60002DIH311Z-TK
- LP6498B6F
- AOZ1282CI
- CMDZ2L4
- SMBJ7.5CA
- CMDZ2L4
- MIC803-44D2VC3
- SMAJ7.5A
- SMBJ7.5A
- SMBJ7.5A
- TLV70734PDQNR
- 74AUP1G157GW
- FTC3837
- SFS7.5A
- SMAJ7.5A
- TLV70734PDQNR
- MIC803-44D2VC3
- SMBJ7.5CA
- BD48K34G-TL
- BD48K34G-TL
- SMBJ7.5CA
- SMBJ7.5A
- 74AUP2G157GN
- BD48K34G-TL
- SMBJ7.5A
- SMBJ7.5A
- SMBJ7.5A
- BD48E34G-TL
- BD48K34G-TR
- BD48E34G-TL
- BD48K34G-TL
- BD48E34G-TL
- BD48E34G-TR
- SMBJ7.5A
- BD48E34G-TR
- SMAJ7.5A
- BD48E34G-TL
- BD48E34G-TL
