Complementary Enhancement Mode Field Effect Transistor

General Description The AOP601 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related lo

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AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description\nThe AOP601 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses n-channel                      p-channel\nVDS(V) = 30V                 -30V\nID= 7.5A (VGS = 10V)      -6.6A\nRDS(ON)\n< 28mΩ                       < 35mΩ(VGS= -10V)\n< 43mΩ                       < 58mΩ(VGS=-4.5V)\nSchottky\nVDS=30V, IF=3A, VF<0.5V@1A;

AOS

美国万代

High Dynamic Range 1.8W 28V HBT Amplifier

Product Description The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has 13.5 dB gain, while being able to achieve high performance for 800-2400 MHz applications with up to +32.5 dBm of compressed 1dB power.

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WJCI

High Dynamic Range 1.8W 28V HBT Amplifier

Product Description The AP601 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has 13.5 dB gain, while being able to achieve high performance for 800-2400 MHz applications with up to +32.5 dBm of compressed 1dB power.

文件：767.47 Kbytes 页数：10 Pages

WJCI

1500V High Voltage, 1 Form A, Solid State Relay (MOSFET)

文件：1.62003 Mbytes 页数：12 Pages

BOARDCOM

博通