Complementary Enhancement Mode Field Effect Transistor

General Description The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel with the n-channel FET redu

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AOSMD

万国半导体

PhotoMOS RELAYS

PhotoMOS RELAYS FEATURES 1. Reinforced insulation 5,000 V type More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 2. Compact 8-pin DIP size The device comes in a compact (W) 6.4×(L)9.86×(H)3.2 mm (W

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NAIS

松下电器

Both NO and NC contacts incorporated in a compact DIP8-pin Reinforced insulation

FEATURES 1. 60V type couples high capacity (0.5A) with low on-resistance (typ. 1Ω). 2. Reinforced insulation 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 3. Aprrox. 1/2 the space compared with th

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Panasonic

松下

PhotoMOS RELAYS

PhotoMOS RELAYS FEATURES 1. Reinforced insulation 5,000 V type More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 2. Compact 8-pin DIP size The device comes in a compact (W) 6.4×(L)9.86×(H)3.2 mm (W

文件：48.58 Kbytes 页数：3 Pages

NAIS

松下电器