Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AOP806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOP806 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 75V

文件：114.04 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

SURFACE MOUNT STEP RECOVERY DIODE

文件：66.67 Kbytes 页数：3 Pages

ASI

SURFACE MOUNT STEP RECOVERY DIODE

DESCRIPTION: The ASRD 800 Series of Step Recovery Diodes are Designed for Synthesiser and Sampler Applications Requiring a High Performance to Cost Ratio. FEATURES INCLUDE: • Transition Time as Low as 70 pS • Surface Mount SOD323 Package

文件：67.17 Kbytes 页数：3 Pages

ASI

SURFACE MOUNT STEP RECOVERY DIODE

DESCRIPTION: The ASRD 800 Series of Step Recovery Diodes are Designed for Synthesiser and Sampler Applications Requiring a High Performance to Cost Ratio. FEATURES INCLUDE: • Transition Time as Low as 70 pS • Surface Mount SOD323 Package

文件：67.17 Kbytes 页数：3 Pages

ASI