| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BU806 | High Voltage & Fast Switching Darlington Transistor High Voltage & Fast Switching Darlington Transistor • Using In Horizontal Output Stages of 110° Crt Video Displays • BUILT-IN SPEED-UP Diode Between Base and Emitter 文件:41.34 Kbytes 页数:4 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | |
BU806 | NPN Darlington Power Transistor This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB 文件:48.21 Kbytes 页数:4 Pages | ONSEMI 安森美半导体 | ONSEMI | |
BU806 | FAST SWITCHING DARLINGTON TRANSISTOR
文件:116.49 Kbytes 页数:3 Pages | BOCA 博卡 | BOCA | |
BU806 | NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BU806 and BU807 types are NPN Silicon Darlington Transistors designed for high voltage, high current, fast switching applications. 文件:347.01 Kbytes 页数:2 Pages | CENTRAL | CENTRAL | |
BU806 | POWER TRANSISTORS(8.0A,150-200V,60W)
文件:110.55 Kbytes 页数:3 Pages | MOSPEC 统懋 | MOSPEC | |
BU806 | 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB • Da 文件:104.59 Kbytes 页数:4 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | |
BU806 | Darlington Transistor Features: • They are high voltage, high current devices for fast switching applicatons • Collector-emitter sustaining voltage-VCEO (sus) = 200V (Min.) - BU806 • Low Collector-emitter Saturation Voltage - VCE (SAT) = 1.5V (Max.) at IC = 5A, IB = 50mA 文件:528.47 Kbytes 页数:4 Pages | MULTICOMP 易络盟 | MULTICOMP | |
BU806 | SILICON DARLINGTON POWER TRANSISTORS SILICON DARLINGTON POWER TRANSISTORS They are silicon epitaxial planar NPN power transistors in Darlington configuration mounted in a TO-220 plastic package. They are high voltage, high current devices for fast switching applications. Compliance to RoHS. 文件:101.88 Kbytes 页数:3 Pages | COMSET | COMSET | |
BU806 | isc Silicon NPN Darlington Power Transistor DESCRIPTION • High Voltage: VCEV= 400V(Min) • Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS • Designed for use in horizontal deflection circuits in TV’s and CRT’s. 文件:108.33 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
BU806 | Silicon NPN Darlington Power Transistor DESCRIPTION • High Voltage: VCEV= 400V(Min) • Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS • Designed for use in horizontal deflection circuits in TV’s and CRT’s. 文件:134.5 Kbytes 页数:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-N+Darl
- 性质:
功率放大 (L)
- 封装形式:
直插封装
- 极限工作电压:
400V
- 最大电流允许值:
8A
- 最大工作频率:
<1MHZ或未知
- 引脚数:
3
- 可代换的型号:
BU184,
- 最大耗散功率:
60W
- 放大倍数:
- 图片代号:
B-89
- vtest:
400
- htest:
999900
- atest:
8
- wtest:
60
产品属性
- 产品编号:
BU806
- 制造商:
STMicroelectronics
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
卷带(TR)
- 晶体管类型:
NPN - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降(最大值):
1.5V @ 50mA,5A
- 电流 - 集电极截止(最大值):
100µA
- 工作温度:
150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-220-3
- 供应商器件封装:
TO-220
- 描述:
TRANS NPN DARL 200V 8A TO220
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STE |
26+ |
TO-220 |
33280 |
原装正品价格优惠,长期优势供应 |
询价 | ||
ST/FSC |
25+ |
TO-220 |
45000 |
ST/FSC全新现货BU806即刻询购立享优惠#长期有排单订 |
询价 | ||
ST |
23+ |
TO |
20000 |
原装进口ICMCUSOCMOS等知名国内外品牌只做原装全 |
询价 | ||
ST |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
onsemi |
25+ |
TO-220-3 |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
24+ |
33 |
询价 | |||||
ST |
TO |
450 |
正品原装--自家现货-实单可谈 |
询价 | |||
ST |
24+ |
原厂封装 |
4000 |
原装现货假一罚十 |
询价 | ||
ST |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
询价 | ||
SGS |
24+/25+ |
36 |
原装正品现货库存价优 |
询价 |

