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BU806

High Voltage & Fast Switching Darlington Transistor

High Voltage & Fast Switching Darlington Transistor • Using In Horizontal Output Stages of 110° Crt Video Displays • BUILT-IN SPEED-UP Diode Between Base and Emitter

文件:41.34 Kbytes 页数:4 Pages

FAIRCHILD

仙童半导体

BU806

NPN Darlington Power Transistor

This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB

文件:48.21 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

BU806

FAST SWITCHING DARLINGTON TRANSISTOR

文件:116.49 Kbytes 页数:3 Pages

BOCA

博卡

BU806

NPN SILICON DARLINGTON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BU806 and BU807 types are NPN Silicon Darlington Transistors designed for high voltage, high current, fast switching applications.

文件:347.01 Kbytes 页数:2 Pages

CENTRAL

BU806

POWER TRANSISTORS(8.0A,150-200V,60W)

文件:110.55 Kbytes 页数:3 Pages

MOSPEC

统懋

BU806

8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS

This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB • Da

文件:104.59 Kbytes 页数:4 Pages

MOTOROLA

摩托罗拉

BU806

Darlington Transistor

Features: • They are high voltage, high current devices for fast switching applicatons • Collector-emitter sustaining voltage-VCEO (sus) = 200V (Min.) - BU806 • Low Collector-emitter Saturation Voltage - VCE (SAT) = 1.5V (Max.) at IC = 5A, IB = 50mA

文件:528.47 Kbytes 页数:4 Pages

MULTICOMP

易络盟

BU806

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS They are silicon epitaxial planar NPN power transistors in Darlington configuration mounted in a TO-220 plastic package. They are high voltage, high current devices for fast switching applications. Compliance to RoHS.

文件:101.88 Kbytes 页数:3 Pages

COMSET

BU806

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High Voltage: VCEV= 400V(Min) • Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS • Designed for use in horizontal deflection circuits in TV’s and CRT’s.

文件:108.33 Kbytes 页数:2 Pages

ISC

无锡固电

BU806

Silicon NPN Darlington Power Transistor

DESCRIPTION • High Voltage: VCEV= 400V(Min) • Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS • Designed for use in horizontal deflection circuits in TV’s and CRT’s.

文件:134.5 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

晶体管资料

  • 型号:

    BU806

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+Darl

  • 性质:

    功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    400V

  • 最大电流允许值:

    8A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BU184,

  • 最大耗散功率:

    60W

  • 放大倍数:

  • 图片代号:

    B-89

  • vtest:

    400

  • htest:

    999900

  • atest:

    8

  • wtest:

    60

产品属性

  • 产品编号:

    BU806

  • 制造商:

    STMicroelectronics

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    卷带(TR)

  • 晶体管类型:

    NPN - 达林顿

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    1.5V @ 50mA,5A

  • 电流 - 集电极截止(最大值):

    100µA

  • 工作温度:

    150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220

  • 描述:

    TRANS NPN DARL 200V 8A TO220

供应商型号品牌批号封装库存备注价格
STE
26+
TO-220
33280
原装正品价格优惠,长期优势供应
询价
ST/FSC
25+
TO-220
45000
ST/FSC全新现货BU806即刻询购立享优惠#长期有排单订
询价
ST
23+
TO
20000
原装进口ICMCUSOCMOS等知名国内外品牌只做原装全
询价
ST
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
onsemi
25+
TO-220-3
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
24+
33
询价
ST
TO
450
正品原装--自家现货-实单可谈
询价
ST
24+
原厂封装
4000
原装现货假一罚十
询价
ST
23+
TO-220
5000
原装正品,假一罚十
询价
SGS
24+/25+
36
原装正品现货库存价优
询价
更多BU806供应商 更新时间2026-4-17 14:01:00