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AOT20N60

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOT20N60

600V,20A N-Channel MOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

20N60

20A,600VN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC20N60isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstand

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

20N60

FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

20N60

N-Channel650-V(D-S)SuperJunctionMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

20N60A

20A600VN-channelenhancedfieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

20N60B

HiPerFASTIGBT

VCES=600V IC25=40A VCE(sat)typ=1.7V tfi(typ)=100ns Features •InternationalstandardpackagesJEDECTO-268surfacemountableandJEDECTO-247AD •Highcurrenthandlingcapability •LatestgenerationHDMOSTMprocess •MOSGateturn-on -drivesimplicity

IXYS

IXYS Integrated Circuits Division

20N60CFD

HITACHIEncapsulation,DIP16

HitachiHitachi, Ltd.

日立公司

20N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

20N60CFD

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnologyExtremedv/dtrated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

20N60CFD

CoolMOSPowerTransistor

Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •Qualifiedforindustrialgradeapplicationsaccording

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AFGB20N60SFD

Usingnovelfield−stopIGBTtechnology

Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.2V@IC=20A •HighInputImpedance •FastSwitching •AEC−Q101QualifiedtoAutomotiveRequirements •TheseDevicesarePb−FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

AFGB20N60SFD-BW

Usingnovelfield−stopIGBTtechnology

Features •HighCurrentCapability •LowSaturationVoltage:VCE(sat)=2.2V@IC=20A •HighInputImpedance •FastSwitching •AEC−Q101QualifiedtoAutomotiveRequirements •TheseDevicesarePb−FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

AIKB20N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-paralleldiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AIKP20N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlleddiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AIKW20N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

AOK20N60

600V,20AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK20N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.37Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOK20N60L

600V,20AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK20N60L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    AOT20N60

  • 制造商:

    AOSMD

  • 制造商全称:

    Alpha & Omega Semiconductors

  • 功能描述:

    600V,20A N-Channel MOSFET

供应商型号品牌批号封装库存备注价格
AOS
23+
TO-220
700000
公主请下单 柒号只做原装
询价
AOS/万代
24+
TO-220
333888
专业直销原装AOS一系列可订货
询价
AOS
TO-220
20000
原装正品
询价
AOS
23+
TO-220
8650
受权代理!全新原装现货特价热卖!
询价
AO原装
22+23+
TO-220
24180
绝对原装正品全新进口深圳现货
询价
AO原装
19+
TO-220
9860
一级代理
询价
23+
N/A
12550
正品授权货源可靠
询价
VB
2019
TO-220
55000
绝对原装正品假一罚十!
询价
AOS万代
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
询价
AOS万代
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
询价
更多AOT20N60供应商 更新时间2024-4-30 15:31:00