Complementary Enhancement Mode Field Effect Transistor

General Description The AOP611 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.Standard Product AOP611 is Pb-free (meets ROHS & Sony 259 specifications). AOP611L is a G

文件：137.68 Kbytes 页数：7 Pages

AOSMD

万国半导体

Operational Amplifier and Adjustable Reference

文件：735.37 Kbytes 页数：17 Pages

NSC

国半

Operational Amplifier and Adjustable Reference

文件：735.37 Kbytes 页数：17 Pages

NSC

国半

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The µPA611TA is a switching device which can be driven directly by a 2.5-V power source. The µPA611TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5-V power source • Low gate

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NEC

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