Complementary Enhancement Mode Field Effect Transistor

General Description The AOP601 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related lo

文件：157.29 Kbytes 页数：8 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

AOS

美国万代

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP601 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related lo

文件：157.29 Kbytes 页数：8 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description\nThe AOP601 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses n-channel                      p-channel\nVDS(V) = 30V                 -30V\nID= 7.5A (VGS = 10V)      -6.6A\nRDS(ON)\n< 28mΩ                       < 35mΩ(VGS= -10V)\n< 43mΩ                       < 58mΩ(VGS=-4.5V)\nSchottky\nVDS=30V, IF=3A, VF<0.5V@1A;

AOS

美国万代