Complementary Enhancement Mode Field Effect Transistor

General Description The AOP607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP607 is Pb-free (meets ROHS & Sony 259 specifications). AOP607L is a

文件：207.61 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

AOS

美国万代

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP607 is Pb-free (meets ROHS & Sony 259 specifications). AOP607L is a

文件：207.61 Kbytes 页数：7 Pages

AOSMD

万国半导体

Self-Calibrating 12-Bit Plus Sign Serial I/O A/D Converters with MUX and Sample/Hold

文件：1.16349 Mbytes 页数：41 Pages

NSC

国半

P-CHANNEL MOS FET 6-PIN 2 CIRCUITS FOR SWITCHING

P-CHANNEL MOS FET (6-PIN 2 CIRCUITS) FOR SWITCHING The µPA607T is a mini-mold device provided with two MOS FET elements. It achieves high-density mounting and saves mounting costs. FEATURES • Two MOS FET elements in package the same size as SC-59 • Complement to µPA606T • Automatic mounting s

文件：63.36 Kbytes 页数：6 Pages

NEC

瑞萨

P-CHANNEL MOS FET 6-PIN 2 CIRCUITS FOR SWITCHING

P-CHANNEL MOS FET (6-PIN 2 CIRCUITS) FOR SWITCHING The µPA607T is a mini-mold device provided with two MOS FET elements. It achieves high-density mounting and saves mounting costs. FEATURES • Two MOS FET elements in package the same size as SC-59 • Complement to µPA606T • Automatic mounting s

文件：63.36 Kbytes 页数：6 Pages

NEC

瑞萨