Complementary Enhancement Mode Field Effect Transistor

General Description The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel with the n-channel FET redu

文件：145.24 Kbytes 页数：7 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description\nThe AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel with the n-channel FET reduces n-channel                             p-channel\nVDS (V) = 30V                          -30V\nID = 7.7A (VGS=10V)                -6.2A (VGS=10V)\nRDS(ON)                               RDS(ON)\n< 24mΩ (VGS=10V)                   < 37mΩ (VGS = -10V)\n< 42mΩ (VGS=4.5V)                  < 60mΩ (VGS = -4;

AOS

美国万代

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel with the n-channel FET redu

文件：145.24 Kbytes 页数：7 Pages

AOSMD

万国半导体

Voltage Variable Capacitance Diode (Tuning Diode)

Description: These diodes are designed for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. Features: High Q with Guaranteed Minimum Values Con

文件：19.55 Kbytes 页数：2 Pages

NTE

General Purpose Rectifier (200-300 Amperes Average 1200 Volts)

Features: □ Standard and Reverse Polarities □ Flag Lead and Stud Top Terminals Available □ High Surge Current Ratings □ High Rated Blocking Voltage □ Special Electrical Selection for Parallel and Series Operation □ Compression Bonded Encapsulation □ JAN Types Available Applicat

文件：686.95 Kbytes 页数：6 Pages

POWEREX

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The µPA610TA is a switching device which can be driven directly by a 2.5 V power source. The µPA610TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5 V power source.

文件：64.18 Kbytes 页数：8 Pages

NEC

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