Complementary Enhancement Mode Field Effect Transistor

General Description The AOP609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP609 is Pb free (meets ROHS & Sony 259 specifications). AOP609L

文件：153.66 Kbytes 页数：7 Pages

AOSMD

万国半导体

MOSFET：Complementary

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP609 is Pb free (meets ROHS & Sony 259 specifications). AOP609L

文件：153.66 Kbytes 页数：7 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 1A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：298.04 Kbytes 页数：2 Pages

ISC

无锡固电

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 600 V Mean forward current 5380 A Surge current 50.4 kA

文件：304.49 Kbytes 页数：4 Pages

POSEICO

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 600 V Mean forward current 6825 A Surge current 60 kA

文件：165.82 Kbytes 页数：4 Pages

POSEICO