AOM033V120X2Q

丝印：M033V120X2Q；Package：TO-247-4L；1200 V αSiC Silicon Carbide Power MOSFET

Features •ProprietaryαSiCMOSFETtechnology •Lowloss,withlowRDS,ON •FastswitchingwithlowRGandlowcapacitance •Optimizedgatedrivevoltage(VGS=15V) •Lowreverserecoverydiode(Qrr) •AEC-Q101AutomotiveQualified Applications •xEVCharger •ElectricVehicleSupply

AOM033V120X2Q

SiC MOSFET;

SiC MOSFET作为第三代功率半导体，由于具有卓越的开关速度、超低的Qrr、高温下极低的Rdson损耗和卓越的UIS能力，使其在有高效率要求的应用场合中表现出极佳的性能。SiC MOSFET目标应用包括工业电机驱动、太阳能逆变器、高功率SMPS和eV充电桩。SiC MOSFET“Q”系列产品，完全符合AECQ-101标准，专为eV 车载充电器 (OBC) 和逆变器而开发，非常容易使用。\n

AOK033V120X2

1200 VαSiCSiliconCarbidePowerMOSFET

Features •ProprietaryαSiCMOSFETtechnology •Lowloss,withlowRDS(ON) •FastswitchingwithlowRGandlowcapacitance •Optimizedgatedrivevoltage(VGS=15V) •Lowreverserecoverydiode(Qrr) Applications Renewable •EVCharger •SolarInverters Industrial •UPS •SMPS

AOK033V120X2Q

1200VαSiCSiliconCarbidePowerMOSFET

Features •ProprietaryαSiCMOSFETtechnology •Lowloss,withlowRDS,ON •FastswitchingwithlowRGandlowcapacitance •Optimizedgatedrivevoltage(VGS=15V) •Lowreverserecoverydiode(Qrr) •AEC-Q101AutomotiveQualified Applications •xEVCharger •ElectricVehicleSupply

AOM033V120X2

1200VαSiCSiliconCarbidePowerMOSFET

Features •ProprietaryαSiCTMMOSFETtechnology •Lowloss,fastswitchingspeedswithlowRG •Optimizeddrivevoltage(VGS=15V)forbroaddrivercompatibility •RobustbodydiodeandlowQrr Applications Renewable •EVCharger •SolarInverters Industrial •UPS •SMPS •MotorDrives