丝印：K033V120X2Q；Package：TO-247-3L；1200 V αSiC Silicon Carbide Power MOSFET

Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS, ON • Fast switching with low RG and low capacitance • Optimized gate drive voltage (VGS = 15 V) • Low reverse recovery diode (Qrr) • AEC-Q101 Automotive Qualified Applications • xEV Charger • Electric Vehicle Supply

文件：833.22 Kbytes 页数：9 Pages

AOSMD

万国半导体

SiC MOSFET

SiC MOSFET作为第三代功率半导体，由于具有卓越的开关速度、超低的Qrr、高温下极低的Rdson损耗和卓越的UIS能力，使其在有高效率要求的应用场合中表现出极佳的性能。SiC MOSFET目标应用包括工业电机驱动、太阳能逆变器、高功率SMPS和eV充电桩。SiC MOSFET“Q”系列产品，完全符合AECQ-101标准，专为eV 车载充电器 (OBC) 和逆变器而开发，非常容易使用。

AOS

美国万代

1200 V αSiC Silicon Carbide Power MOSFET

Features •Proprietary αSiCTM MOSFET technology •Low loss, fast switching speeds with low RG •Optimized drive voltage (VGS = 15 V) for broad driver compatibility •Robust body diode and low Qrr Applications Renewable •EV Charger •Solar Inverters Industrial •UPS •SMPS •Motor Drives

文件：885.4 Kbytes 页数：9 Pages

AOSMD

万国半导体

1200 V αSiC Silicon Carbide Power MOSFET

Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS, ON • Fast switching with low RG and low capacitance • Optimized gate drive voltage (VGS = 15 V) • Low reverse recovery diode (Qrr) • AEC-Q101 Automotive Qualified Applications • xEV Charger • Electric Vehicle Supply

文件：778.62 Kbytes 页数：9 Pages

AOSMD

万国半导体