丝印：AO4485；Package：SOP-8；P-Channel MOSFET

Features VDS (V) = -40V ID = -10A RDS(ON)

文件：479.99 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：AO4485；Package：SOP-8；P-Channel MOSFET

General Description The AO4485 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. Features VDS (V) = -40V ID = -10A RDS(ON)

文件：430.39 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：AO4485；Package：SOP-8；P-Channel MOSFET

Features VDS (V) = -40V ID = -10A RDS(ON)

文件：479.99 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：AO4485；Package：SOP-8；P-Channel MOSFET

General Description The AO4485 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. Features VDS (V) = -40V ID = -10A RDS(ON)

文件：430.39 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：4485；Package：SOP-8；P-Channel MOSFET

■ Features ● VDS (V) =-40V ● ID =-10 A (VGS =-10V) ● RDS(ON)

文件：1.17686 Mbytes 页数：4 Pages

KEXIN

科信电子

丝印：4485；Package：SOP-8；P-Channel MOSFET

■ Features ● VDS (V) =-40V ● ID =-10 A (VGS =-10V) ● RDS(ON)

文件：1.82733 Mbytes 页数：4 Pages

KEXIN

科信电子

40V P-Channel MOSFET

General Description The AO4485 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. Product Summary VDS (V) = -40V ID = -10A (VGS = -10V) RDS(ON)

文件：1.71153 Mbytes 页数：4 Pages

WHXPCB

万和兴电子

P-Channel 40 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • 100 UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • POL

文件：1.8502 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4485/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. AO4485 and AO4485L are electrically identical. -RoHS Compliant -AO4485L is Halogen Free Features VDS (V) =

文件：210.46 Kbytes 页数：4 Pages

AOSMD

万国半导体

P-Channel MOSFET uses advanced trench technology

Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-40V,ID=-10A,RDS(ON)

文件：553 Kbytes 页数：4 Pages

DOINGTER

杜因特