丝印：4466；Package：SO-8；N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the sour

文件：127.82 Kbytes 页数：4 Pages

AOSMD

万国半导体

丝印：4466；Package：SO-8；30V N-Channel MOSFET

文件：411.62 Kbytes 页数：6 Pages

AOSMD

万国半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：164.96 Kbytes 页数：6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：165.03 Kbytes 页数：6 Pages

DIODES

美台半导体

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 9.4 A (VGS = 10V) ● RDS(ON)

文件：1.42012 Mbytes 页数：4 Pages

KEXIN

科信电子