| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AO4459 | 丝印：AO4459；Package：SOP-8；P-Channel MOSFET Product Summary VDS = -30V ID = -6.5 A RDS(ON) 文件：572.42 Kbytes 页数：8 Pages | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | |
AO4459 | 丝印：AO4459；Package：SOP-8；P-Channel MOSFET General Description The AO4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS = -30V ID = -6.5 A RDS(ON) 文件：511.68 Kbytes 页数：8 Pages | EVVOSEMI 翊欧 | EVVOSEMI | |
AO4459 | 丝印：AO4459；Package：SOP-8；P-Channel MOSFET Product Summary VDS = -30V ID = -6.5 A RDS(ON) 文件：572.42 Kbytes 页数：8 Pages | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | |
AO4459 | 丝印：AO4459；Package：SOP-8；P-Channel MOSFET General Description The AO4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS = -30V ID = -6.5 A RDS(ON) 文件：511.68 Kbytes 页数：8 Pages | EVVOSEMI 翊欧 | EVVOSEMI | |
AO4459 | 丝印：4459；Package：SOP8；P-Channel Power MOSFET Application | « Reverse Battery protection « Load switch | « Power management « PWM Appiication 文件：1.55167 Mbytes 页数：3 Pages | TECHPUBLIC 台舟电子 | TECHPUBLIC | |
丝印：4459；Package：SO-8；P-Channel Enhancement Mode Field Effect Transistor General Description The AO4459 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AO4459 is Pb-free (meets ROHS & Sony 259 specifications). AO4459L is a Green Product orde 文件：131.039 Kbytes 页数：4 Pages | AOSMD 万国半导体 | AOSMD | ||
丝印：4459；Package：SOP-8；P-Channel MOSFET 文件：467.97 Kbytes 页数：5 Pages | KEXIN 科信电子 | KEXIN | ||
丝印：4459；Package：SO-8；30V P-Channel MOSFET 文件：604.8 Kbytes 页数：6 Pages | AOSMD 万国半导体 | AOSMD | ||
AO4459 | P-Channel Enhancement Mode Field Effect Transistor General Description The AO4459 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AO4459 is Pb-free (meets ROHS & Sony 259 specifications). AO4459L is a Green Product orde 文件：131.039 Kbytes 页数：4 Pages | AOSMD 万国半导体 | AOSMD | |
AO4459 | 30V P-Channel MOSFET General Description The AO4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS -30V ID (at VGS=-10V) 文件：2.81514 Mbytes 页数：6 Pages | WHXPCB 万和兴电子 | WHXPCB |
详细参数
- 型号：
AO4459
- 功能描述：
MOSFET P-CH -30V -6.5A 8-SOIC
- RoHS：
是
- 类别：
分离式半导体产品 >> FET - 单
- 系列：
-
- 标准包装：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金属氧化物 FET
- 特点：
逻辑电平门
- 漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
- C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
- Vgs：
72nC @ 10V 输入电容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安装类型：
通孔
- 封装/外壳：
TO-220-3 整包
- 供应商设备封装：
TO-220FP
- 包装：
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS美国万代 |
24+ |
SOP-8 |
888000 |
AOS代理商 优势供应美国万代AOS全系列 |
询价 | ||
AOS万代 |
2020 |
SOP8 |
267 |
全新原装 正品现货 |
询价 | ||
AOS |
21+ |
SOP8 |
3000 |
原装正品 深圳现货 |
询价 | ||
AOS/万代 |
23+ |
NA |
7825 |
原装正品!清仓处理! |
询价 | ||
AOS/万代 |
25+ |
SOP-8 |
32076 |
AOS/万代全新特价AO4459即刻询购立享优惠#长期有货 |
询价 | ||
AOS |
16+ |
SOP8 |
9243 |
询价 | |||
AOS/万代 |
2019+ |
SOP8 |
18000 |
原厂渠道 可含税出货 |
询价 | ||
AOS/万代 |
25+23+ |
SOP8 |
13397 |
绝对原装正品全新进口深圳现货 |
询价 | ||
AOS |
19+ |
SO8 |
30000 |
全新原装公司现货
|
询价 | ||
AOS |
21+ |
SOP8 |
2400 |
十年信誉,只做原装,有挂就有现货! |
询价 |
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