丝印：AO4468；Package：SOP-8；30V N-Channel MOSFET

Features VDS (V) =30V ID = 10.5A (VGS =10V) RDS(ON)

文件：358.51 Kbytes 页数：7 Pages

UMW

友台半导体

N-Channel 30-V (D-S) MOSFET

Application « Reverse Battery protection » Load switch o Power management PWM Application

文件：2.26868 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS 30V I

文件：147.82 Kbytes 页数：4 Pages

AOSMD

万国半导体

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10.5 A (VGS = 10V) ● RDS(ON)

文件：1.33332 Mbytes 页数：4 Pages

KEXIN

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N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

文件：1.0065 Mbytes 页数：9 Pages

VBSEMI

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30V N-Channel MOSFET

General Description The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS 30V ID (at VGS=10

文件：2.1917 Mbytes 页数：5 Pages

WHXPCB

万和兴电子

30V N-Channel MOSFET

文件：255.8 Kbytes 页数：5 Pages

AOSMD

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N-Channel 30-V(D-S) MOSFET

Techpublic

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XW

芯微半导体

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MTW

美台微