丝印：4430；Package：SO-8；N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4430/L uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AO4430 and AO4430

文件：284.28 Kbytes 页数：5 Pages

AOSMD

万国半导体

Simple Drive Requirement, Fast Switching Characteristic

文件：255.17 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子

Ultra_Low On-resistance, Simple Drive Requirement

文件：99.22 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-Channel Enhancement Mode MOSFET

Features • 30V/12.5A, RDS(ON) = 4.5mΩ(typ.) @ VGS = 10V RDS(ON) = 7mΩ(typ.) @ VGS = 5V • Super High Dense Cell Design • Reliable and Rugged • SOP-8 Package • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery P

文件：179.27 Kbytes 页数：10 Pages

ANPEC

茂达电子