N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4420 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.This device is suitable for use as a synchronous switch in PWM applications. AO4420L is offered in a lead-free package. AO4420L ( Green Product ) is o

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N-Channel Enhancement Mode Field Effect Transistor

General Description The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low RDS(ON) per unit area. This device is ideal for load switch and high speed switching applications. - RoHS Compliant - Halogen Free Features VDS (V) = 30V ID = 10A (

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AOSMD

万国半导体

Lower Gate Charge, Simple Drive Requirement

文件：98.86 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Lower Gate Charge, Simple Drive Requirement

文件：98.86 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子