P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4451 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4451 is Pb-free (meets ROHS & Sony 259 specifications). AO4451L is a

文件：125.64 Kbytes 页数：4 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

P-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO4451 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4451 is Pb-free (meets ROHS & Sony 259 specifications). AO4451L is a Green Pr VDS (V) = -30V\nID = -15 A (VGS = -10V)\nRDS(ON) < 7.7mΩ (VGS = -10V)\nRDS(ON) < 12mΩ (VGS = -4.5V)\nESD Rating: 4KV HBM;

AOS

美国万代

Low On-resistance, Simple Drive Requirement

文件：64.459 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement, Lower On-resistance

文件：101.22 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件：101.21 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子