Complementary Enhancement Mode Field Effect Transistor

文件：690.95 Kbytes 页数：12 Pages

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Silicon Limiter Diodes and Ceramic Hermetic Packaged Devices

Features  Established limiter diode process  High power, mid-range, and cleanup designs  Low insertion loss: 0.1 dB @ 10 GHz  Peak power handling to +74 dBm  Ultra low spike leakage power  Tight control of I layer base width

文件：402.69 Kbytes 页数：9 Pages

SKYWORKS

思佳讯

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 8.5 A (VGS = 10V) RDS(ON)

文件：1.76277 Mbytes 页数：7 Pages

KEXIN

科信电子

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 8.5 A (VGS = 10V) RDS(ON)

文件：2.41207 Mbytes 页数：7 Pages

KEXIN

科信电子