Complementary Enhancement Mode Field Effect Transistor

General Description The AO4613 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4613 is Pb-free (m

文件：181.65 Kbytes 页数：7 Pages

AOSMD

万国半导体

丝印：4613；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 7.2 A (VGS = 10V) RDS(ON)

文件：2.2004 Mbytes 页数：7 Pages

KEXIN

科信电子

30V Dual P N-Channel MOSFET

文件：219.97 Kbytes 页数：7 Pages

AOSMD

万国半导体

MOSFET：Complementary

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

丝印：4613；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 7.2 A (VGS = 10V) RDS(ON)

文件：3.11686 Mbytes 页数：7 Pages

KEXIN

科信电子

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4613 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4613 is Pb-free (m

文件：181.65 Kbytes 页数：7 Pages

AOSMD

万国半导体

30V Dual P N-Channel MOSFET

文件：219.97 Kbytes 页数：7 Pages

AOSMD

万国半导体