Complementary Enhancement Mode Field Effect Transistor

General Description The AO4617 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.Standard Product AO4617 is Pb-free (meets ROHS & Sony 259 specifications). AO4617L is a G

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AOSMD

万国半导体

N- and P-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 Rg and UIS Tested APPLICATIONS • CCFL Inverter

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VBSEMI

微碧半导体

Complementary Enhancement Mode Field Effect Transistor

AOS

美国万代

ZENER DIODE CHIPS

• 1N4614 THRU 1N4627 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/435 • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N4614 THRU 1N4627 • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTAC

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CDI-DIODE

LEADLESS PACKAGE FOR SURFACE MOUNT

• 1N4614UR-1 THRU 1N4627UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED

文件：109.68 Kbytes 页数：2 Pages

CDI-DIODE

LEADLESS PACKAGE FOR SURFACE MOUNT

• 1N4614UR-1 THRU 1N4627UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED

文件：122.75 Kbytes 页数：2 Pages

MICROSEMI

美高森美