Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch. AO4802L ( Green Pr

文件：116.46 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch. AO4802L ( Green Pr

文件：116.46 Kbytes 页数：4 Pages

AOSMD

万国半导体

5*3.8*6.5mm SILICON PHOTO DIODES

文件：240.58 Kbytes 页数：4 Pages

BETLUX

PARALLEL REAL-TIME CLOCK WITH CPU SUPERVISOR AND EXTERNAL SRAM NONVOLATILE MEMORY BACKUP

文件：301.06 Kbytes 页数：23 Pages

TI

德州仪器

PARALLEL REAL-TIME CLOCK WITH CPU SUPERVISOR AND EXTERNAL SRAM NONVOLATILE MEMORY BACKUP

FEATURES Real-Time Clock Counts Seconds Through Centuries in BCD Format – bq4802Y: 5-V Operation – bq4802LY: 3.3-V Operation On-Chip Battery-Backup Switchover Circuit With Nonvolatile Control for External SRAM Less Than 500 nA of Clock Operation Current in Backup Mode Microprocessor Reset

文件：412.94 Kbytes 页数：25 Pages

TI

德州仪器