60V Dual N-Channel MOSFET

General Description The AO4852 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. As a pair these MOSFETs operate very efficiently in Push Pull and Bridge topologies. Product Summary VDS (V) = 60V ID = 3.5A (VGS = 10V) RDS(ON)

文件：171.2 Kbytes 页数：4 Pages

AOSMD

万国半导体

丝印：4852；Package：SOP-8；Dual N-Channel MOSFET

文件：1.0718 Mbytes 页数：4 Pages

KEXIN

科信电子

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.08415 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

丝印：4852；Package：SOP-8；Dual N-Channel MOSFET

文件：1.783 Mbytes 页数：4 Pages

KEXIN

科信电子