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AO4900

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4900 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronou

文件:123.34 Kbytes 页数:5 Pages

AOSMD

万国半导体

AO4900

丝印:4900;Package:SOP-8;Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 6.9 A (VGS = 10V) ● RDS(ON)

文件:1.78844 Mbytes 页数:5 Pages

KEXIN

科信电子

AO4900

MOSFET:Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

AO4900A

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4900A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC DC converters. A Schottky diode is co-packaged in parallel with the synchrono

文件:119.7 Kbytes 页数:5 Pages

AOSMD

万国半导体

AO4900AL

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4900A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC DC converters. A Schottky diode is co-packaged in parallel with the synchrono

文件:119.7 Kbytes 页数:5 Pages

AOSMD

万国半导体

AO4900L

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4900 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronou

文件:123.34 Kbytes 页数:5 Pages

AOSMD

万国半导体

AO4900A

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AOS

美国万代

技术参数

  • Status:

    Not For New Designs

  • Recommended Replacement:

    AO4924

  • Package:

    SOIC-8

  • Configuration:

    Dual - N

  • Vds/V:

    30

  • Vgs/V:

    12

  • Id(A)(25℃):

    6.9

  • Id(A)(75℃):

    5.8

  • Pd(W)(25℃):

    2

  • Pd(W)(75℃):

    1.44

  • Rds (on) mΩ max(10V):

    27

  • Rds (on) mΩ max(4.5V):

    32

  • Rds (on) mΩ max(2.5V):

    50

  • Qg (nC):

    9.6

供应商型号品牌批号封装库存备注价格
AOS/万代
2019+
SOP8
3470
原厂渠道 可含税出货
询价
AOS/万代
2021+
SO-8
9000
原装现货,随时欢迎询价
询价
AOS/万代
24+
SOP-8
498339
免费送样原盒原包现货一手渠道联系
询价
AOS
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
AOS
24+
SO-8
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
ALPHA
22+
SOP8
25368
询价
ALPHA&OMEGA
24+/25+
448
原装正品现货库存价优
询价
AO
25+
DIP
18000
原厂直接发货进口原装
询价
AO
23+
TQFP
5000
原装正品,假一罚十
询价
AO/ALPHA&OMEGA
24+
SSOP-8
6300
新进库存/原装
询价
更多AO4900供应商 更新时间2025-10-4 16:03:00