Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4812A uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. AO4812A is Pb-free (meets ROHS & Sony 259 specifications). AO4

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AOSMD

万国半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO4812A uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. AO4812A is Pb-free (meets ROHS & Sony 259 specifications). AO4812AL VDS(V) = 30V\nID= 6.9A (VGS= 10V)\nRDS(ON) < 28mΩ(VGS= 10V)\nRDS(ON)< 42mΩ(VGS= 4.5V);

AOS

美国万代

30V N+N MOSFET

JGSEMI

金锆半导体

MOSFET

MTW

美台微