80V Dual N-Channel MOSFET

General Description The AO4830 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. Product Summary VDS (V) = 80V ID = 3.5A (VGS = 10V) RDS(ON) 100 UIS Tested 100 Rg T

文件：188.45 Kbytes 页数：6 Pages

AOSMD

万国半导体

丝印：4830；Package：SOP-8；Dual N-Channel MOSFET

文件：1.35448 Mbytes 页数：5 Pages

KEXIN

科信电子

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

丝印：4830；Package：SOP-8；Dual N-Channel MOSFET

文件：1.88189 Mbytes 页数：5 Pages

KEXIN

科信电子

Dual N-Channel Enhancement Mode Field Effect Transistor

文件：147.81 Kbytes 页数：6 Pages

AOSMD

万国半导体