Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4824 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. Standard Product AO4824 is Pb-free (meets ROHS & Sony 259 spe

文件：134.94 Kbytes 页数：7 Pages

AOSMD

万国半导体

Dual N-Channel MOSFET

XW

芯微半导体

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

30V Dual N-Channel MOSFET

General Description The AO4824 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. Standard Product AO4824 is Pb-free (meets ROHS & Sony 259 spe

文件：184.66 Kbytes 页数：7 Pages

AOSMD

万国半导体

丝印：4824L；Package：SOP-8；Dual N-Channel MOSFET

■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 8.5A (VGS = 10V) ● RDS(ON)

文件：1.72956 Mbytes 页数：7 Pages

KEXIN

科信电子

丝印：4824L；Package：SOP-8；Dual N-Channel MOSFET

■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 8.5A (VGS = 10V) ● RDS(ON)

文件：2.96093 Mbytes 页数：7 Pages

KEXIN

科信电子

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代