30V Dual N-channel MOSFET

General Description The AO4818B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS 30V ID (at VGS=10V) 8A

文件：304.87 Kbytes 页数：6 Pages

AOSMD

万国半导体

丝印：4818B；Package：SOP-8；Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8A (VGS = 10V) ● RDS(ON)

文件：2.06928 Mbytes 页数：5 Pages

KEXIN

科信电子

Dual N-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • Low Current DC/DC

文件：1.048319 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：4818B；Package：SOP-8；Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8A (VGS = 10V) ● RDS(ON)

文件：2.53885 Mbytes 页数：5 Pages

KEXIN

科信电子

低压MOSFET (12V - 30V)

30V Dual N-channel MOSFET

AOS

美国万代