Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4902 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two identical MOSFETs are co-packaged in parallel with a Schottky diode, making them ideal for many bridge and totem pole applications, for e.g. DDR memory.Standard Product AO4902

文件：129.56 Kbytes 页数：5 Pages

AOSMD

万国半导体

Dual N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 UIS Tested • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Set Top Box • Low Current DC/DC

文件：1.0248 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4902 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two identical MOSFETs are co-packaged in parallel with a Schottky diode, making them ideal for many bridge and totem pole applications, for e.g. DDR memory.Standard Product AO4902

文件：129.56 Kbytes 页数：5 Pages

AOSMD

万国半导体