Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4918A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous

文件：151.58 Kbytes 页数：8 Pages

AOSMD

万国半导体

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4918A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous

文件：151.58 Kbytes 页数：8 Pages

AOSMD

万国半导体

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4918 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous

文件：151.84 Kbytes 页数：8 Pages

AOSMD

万国半导体

BLOCK DIAGRAM AND SCHEMATIC DIAGRAM

3.1 BLOCK DIAGRAM

文件：293.13 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Low Voltage Standard CMOS Voltage Detector IC Series

文件：266.76 Kbytes 页数：9 Pages

ROHM

罗姆