P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6405 is Pb-free (meets ROHS & Sony 259 specifications). AO6405L is a Green Product orde

文件：284.62 Kbytes 页数：4 Pages

AOSMD

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30V P-Channel MOSFET

文件：251 Kbytes 页数：6 Pages

AOSMD

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P-Channel 30 V (D-S) MOSFET

文件：986.65 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AON6405L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for load switch and battery protection applications. -RoHS Compliant -Halogen Free Features VDS (V) = -30V ID = -30A (VGS = -1

文件：133.82 Kbytes 页数：5 Pages

AOSMD

万国半导体