Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6801 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6801 is Pb-free (meets ROHS & Sony 259 specifications). AO6801L is a Green Product order

文件：110.34 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-2.3A (VGS =-10V) ● RDS(ON)

文件：1.41705 Mbytes 页数：4 Pages

KEXIN

科信电子

30V Dual P-Channel MOSFET

文件：276.47 Kbytes 页数：5 Pages

AOSMD

万国半导体

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

P-channel MOSFETS

XW

芯微半导体

Dual P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Applications • Battery Switch for Portable Devices • Computers - Bus Switch - Load Switch

文件：1.93653 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-2.3A (VGS =-10V) ● RDS(ON)

文件：1.27263 Mbytes 页数：4 Pages

KEXIN

科信电子

30V Dual P-Channel MOSFET

General Description The AO6801A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS -30V ID (at VGS=-10V) -2.3A

文件：336.64 Kbytes 页数：5 Pages

AOSMD

万国半导体

Dual P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-2.3A (VGS =-10V) ● RDS(ON)

文件：2.02956 Mbytes 页数：4 Pages

KEXIN

科信电子

Dual P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-2A (VGS =-10V) ● RDS(ON)

文件：1.91152 Mbytes 页数：4 Pages

KEXIN

科信电子