30V Dual P-Channel MOSFET

General Description The AO6801E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS -30V ID (at VGS=-10

文件：308.58 Kbytes 页数：5 Pages

AOSMD

万国半导体

Dual P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-2A (VGS =-10V) ● RDS(ON)

文件：1.91152 Mbytes 页数：4 Pages

KEXIN

科信电子

Dual P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-2A (VGS =-10V) ● RDS(ON)

文件：2.05487 Mbytes 页数：4 Pages

KEXIN

科信电子

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代