Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6804 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO6804 is Pb-free (meets ROHS & Sony 259 specifications). Fea

文件：143.09 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID =5 A (VGS = 4.5V) ● RDS(ON)

文件：1.47487 Mbytes 页数：4 Pages

KEXIN

科信电子

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

Dual N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID =5 A (VGS = 4.5V) ● RDS(ON)

文件：1.7096 Mbytes 页数：4 Pages

KEXIN

科信电子

20V Dual N-Channel MOSFET

General Description The AO6804A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. Product Summary VDS = 20V ID = 5.0A (VGS = 4.5V) RDS(ON)

文件：204.31 Kbytes 页数：5 Pages

AOSMD

万国半导体

Dual N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID =5 A (VGS = 4.5V) ● RDS(ON)

文件：1.88133 Mbytes 页数：4 Pages

KEXIN

科信电子

Dual N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID =5 A (VGS = 4.5V) ● RDS(ON)

文件：1.53689 Mbytes 页数：4 Pages

KEXIN

科信电子

低压MOSFET (12V - 30V)

20V Dual N-Channel MOSFET

AOS

美国万代