P-Channel Enhancement Mode Field Effect Transistor

General Description The AO7407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -20V ID = -1.2 A RDS(ON)

文件：263.67 Kbytes 页数：6 Pages

ALPHA

20V P-Channel MOSFET

General Description The AO7407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS -20V ID (at V

文件：351.43 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • DC/DC Converters

文件：1.01843 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P沟道MOSFET (8V - 60V)

20V P-Channel MOSFET

AOS

美国万代