丝印：3**；Package：SOT-323；P-Channel Enhancement Mode Field Effect Transistor

General Description The AO7403 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low

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P-Channel Enhancement Mode Field Effect Transistor

General Description The AON7403/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AON7403 and AON7403L are electrically identical. ​​​​​​​ -RoHS Complian

文件：189.93 Kbytes 页数：4 Pages

AOSMD

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30V P-Channel MOSFET

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AOSMD

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P-Channel Enhancement Mode Field Effect Transistor

General Description The AON7403/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AON7403 and AON7403L are electrically identical. ​​​​​​​ -RoHS Complian

文件：189.93 Kbytes 页数：4 Pages

AOSMD

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